| PART |
Description |
Maker |
| SB50-18 |
180V, 5A Rectifier(高频整流应用的重复反向电80V，平均整流电A 整流
180V/ 5A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 5A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SB80-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 8A Rectifier
180V/ 8A Rectifier
|
Sanyo Semicon Device
|
| 2SA1216 |
POWER TRANSISTORS(17A,180V,200W) 功率晶体管（7A80V，功00W
POWER TRANSISTORS(17A/180V/200W)
POWER TRANSISTORS(17A180V200W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| 2SK2492 |
VZ Series Power MOSFET(180V 20A)
|
Shindengen Electric Mfg.Co.Ltd
|
| LND056-48 |
180V, 96 Channel MEMs Driver with DC/DC & Energy Savings Subsystem
|
Linear Dimensions Semiconductor
|
| FCX555TA |
180V High voltage PNP switching transistor in SOT89
|
Diodes Incorporated
|
| DXT696BK DXT696BK-13 |
180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252
|
Diodes
|
| EN3582A EN3582 |
Bipolar Transistor, -180V, -160A, Low VCE(sat) PNP Single NMP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2SA1535A 2SA1535 0272 2SA1535/2SA1535A 2SA1535S 2S |
TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 1A I(C) | SOT-186
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | SOT-186
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
From old datasheet system
Power Transistors
|
Matsshita / Panasonic
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
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